EI4GroupIV website of the New Materials group at the University of Vigo                                  

EI4GroupIV

Excellence Initiative for Group IV Semiconductor Research

 
FA-3 Group

FA-3 group and their EI4GroupIV activities

 


The New Materials Group (FA-3) at the University of Vigo is focusing its research activities mainly on laser processing and on the development of bio-inspired SiC. A broad band of topics is covered, such as:

  • UV-Laser assisted growth of amorphous group IV materials and of bioactive Calcium Phosphate coatings
  • Laser assisted chemical and morphological surface modification
  • Laser annealing and  crystallization of nanocrystalline group IV semiconductors
  • Pulsed laser induced epitaxial growth of group IV alloys for material engineering
  • Laser ablation for structuring polymer surfaces as well as for cleaning monuments of the cultural heritage
  • Numerical simulation of laser-material interactions
  • Formation of bio-inspired SiC scaffolds from wood and algae
  • Biological tests for assessing bio-activity of biomedical devices

Targeted fields of application are among others:
Microelectronics, photonics, photovoltaics, nanotechnology, biomedicine, conservation of cultural heritage

For more detailed information please follow these links:

Research

2009

2010

2011

2012

 
 

2009
(preparatory activities)

20-23.9.2009
1st International Workshop on Si based nano-electronics and -photonics SiNEP-09 in Vigo.
Organization of a workshop focused on processing, characterization and modelling of group IV semiconductors and related materials for band gap and material engineering with applications in nanoelectronic, nanophotonic and photo-voltaic devices. More than 90 participants from 15 different countries participated in this fruitful multidisciplinar event.
For looking at the book of proceedings (ISBN 9788497454162 ), please follow the link: PROCEEDINGS SiNEP-09

Oct. 2009
UV-Laser processing and characterization of samples received from RIEC Sendai

Nov. 2009

UV-Laser processing and characterization of samples received from IHT Stuttgart


 
2010
(includes some few preparatory activities)

29-30.1.2010
5th International WorkShop on New Group IV Semiconductor Nanoelectronics in Sendai.
Presentation of the invited talk
"Effects of 193 nm Excimer laser radiation on SiO2-Si-SiGe heterostructures grown on s-SOI substrates"


May 2009
Improvements in the experimental set-up will now allow us to irradiate samples in our HV/UHV system using 20 ns pulses of 193nm as well as 5-10 ns pulses of 266, 355, 532, and 1064nm wavelength

May 2009
UV-Laser processing and characterization of samples received from RIEC Sendai

June 2010
UV-Laser processing and characterization of samples received from CINaM Marseille


 
2011

09.2011
First results of the cooperations between IHT Stuttgart and Vigo are presented as poster (Laser assisted formation of binary and ternary Ge/Si/Sn alloys) at the 7th International Conference on Si Epitaxy and Hetero-structures (ICSI-7) in Leuven (Belgium)

09.2011

First results of the cooperations between CINaM Marseille and Vigo are presented as poster (Laser annealing of diluted ferromagnetic Ge(1-x)Mnx alloys) at the 7th International Conference on Si Epitaxy and Hetero-structures (ICSI-7) in Leuven (Belgium).

09.2011
Cooperation between UVigo and IHT Stuttgart wins the"Best Poster Award" of the 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7) in Leuven (Belgium)
Stefan Stefanov (PhD student in Vigo) poster on "Laser assisted formation of binary and ternary Ge/Si/Sn alloys" demonstrated the formation of GeSn and SiGeSn alloys through UV-Excimer laser treatment of MBE grown Sn/v-Ge/Si(100) structures.
More details in www.newmaterials.uvigo.es

 
2012
18.06.2012
S.Chiussi from FA3 group gives an invited talk at IHP Frankfurt/Oder on "Pulsed UV-laser processing of amorphous and crystalline group IV semiconductors".

4-6.09.2012
FA3 group organizes the 1st European Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" of the JSPS Core-to-Core Advanced Research Network "International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration",

Sept.2012
FA3 group starts with Tohoku Univ. student Ueno Naofumi the FIB-specimen preparation and HR-XTEM analysis of ALD Multilayers from Sendai.

Sept.2012
FA3 group starts cooperation with EI4GroupIV partner IHP on laser processing of their 200 mm wafers for different purposes.
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Academic
2009
2010
2011
2012  
 


2009


Dec. 2009

D.Barral defends her Final Engineering Project "LCVD of boron doped SiGe films on polymers"


 
2010

Jan. 2010
Bilateral Erasmus-Socrates Agreement for Student and Teaching Mobility has been signed with IHT Stuttgart

27.1.2010

S.Chiussi from FA-3 group gives a lecture on"UV-Excimer laser assisted processing of SiGe: From amorphous hydrogenated films to heteroepitaxial alloys" to Master od Science students of the Tohoku University

Feb. 2010
Bilateral Erasmus-Socrates Agreement for Student and Teaching Mobility has been signed with the Université de la Méditerranée Aix-Marseille (Linked to CINaM)

22.03.2010
F.Gontad from FA-3 group defends his EU PhD thesis"Laser processing of Si and Ge thin films"

06.04.2010
M.Manucci from Marseille starts his 4 month project on "Laser-assisted processing of SiGe thin films on flexible polyimide sheets for piezoelectric Biosensors"

01.05.2010
S.Stefanov from FA-3 starts his PhD thesis related to "Laser processing of group IV semiconductors"

01.06.10
S.Chiussi from FA-3 group starts his 2 month stay as Invited Professor at the Tohoku University


 
2011
25.02.2011
Bilateral Cooperation with RIEC Tohoku University Sendai has been signed

25.02.2011
J.Murota from RIEC gives a talk in the frame of our conferences series "New Horizons in Appied Physics"

27.02.2011
Articles and press releases related to the Academic Agreement with the RIEC can be found in our web page
www.newmaterials.uvigo.es


09.2011

Industrial Engineering student José Manuel Puga starts his 10 month Final Engineering Project on GeSn characterization at IHT Stuttgart. The project will be done in the frame of the Erasmus/Socrates student exchange programe.


 
2012
03.05.2012
CINaM students Zhenning Dong and Florent Cerdan start their 3 month Practical stay in the frame of the Erasmus/Socrates student exchange program for startig Spin-On-Doping and UV laser processing of Si and Ge.

July 2012

Industrial Engineering student José Manuel Puga defends successfully his Final Engineering Project on "Analysis and characterization of GeSn samples for application in electonic devises". The study has been done at IHT Stuttgart the frame of the Erasmus/Socrates student exchange programe.

Sept.2012
FA3 group students Mateo Pérez starts at Tohoku Univ. a 3 month stay for growing Si/Ge heterostructures through CVD techiques.
   
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last updated: 25-09-2012 (ei4groupiv@uvigo.es)